欢迎访问ic37.com |
会员登录 免费注册
发布采购

M12S64322A-6TG 参数 Datasheet PDF下载

M12S64322A-6TG图片预览
型号: M12S64322A-6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32位×4银行同步DRAM [512K x 32 Bit x 4 Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 46 页 / 725 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M12S64322A-6TG的Datasheet PDF文件第4页浏览型号M12S64322A-6TG的Datasheet PDF文件第5页浏览型号M12S64322A-6TG的Datasheet PDF文件第6页浏览型号M12S64322A-6TG的Datasheet PDF文件第7页浏览型号M12S64322A-6TG的Datasheet PDF文件第9页浏览型号M12S64322A-6TG的Datasheet PDF文件第10页浏览型号M12S64322A-6TG的Datasheet PDF文件第11页浏览型号M12S64322A-6TG的Datasheet PDF文件第12页  
ESMT  
M12S64322A  
Version  
Parameter  
Symbol  
Unit  
Note  
-6  
-7  
Col. address to col. address delay  
tCCD(min)  
1
2
CLK  
ea  
3
4
CAS latency = 3  
CAS latency = 2  
Number of valid  
Output data  
1
Note : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then  
rounding off to the next higher integer.  
2. Minimum delay is required to complete write.  
3. All parts allow every cycle column address change.  
4. In case of row precharge interrupt, auto precharge and read burst stop.  
AC CHARACTERISTICS (AC operating condition unless otherwise noted)  
-6  
-7  
Parameter  
Symbol  
Unit  
Note  
Min  
6
Max  
Min  
Max  
CAS latency = 3  
7
CLK cycle time  
tCC  
1000  
1000  
ns  
1
CAS latency = 2  
CAS latency = 3  
CAS latency = 2  
CAS latency = 3  
CAS latency = 2  
10  
10  
CLK to valid  
5.5  
6
6
6
tSAC  
ns  
ns  
1,2  
2
output delay  
Output data  
2
2
2
2
tOH  
hold time  
CLK high pulsh width  
CLK low pulsh width  
Input setup time  
Input hold time  
CLK to output in Low-Z  
tCH  
tCL  
2.5  
2.5  
1.5  
1
2.5  
2.5  
2
ns  
ns  
ns  
ns  
ns  
3
3
3
3
2
tSS  
tSH  
tSLZ  
1
1
1
CLK to output  
in Hi-Z  
CAS latency = 3  
CAS latency = 2  
5.5  
6
6
6
tSHZ  
ns  
Note : 1. Parameters depend on programmed CAS latency.  
2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.  
3. Assumed input rise and fall time (tr & tf) =1ns.  
If tr & tf is longer than 1ns. transient time compensation should be considered.  
i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May. 2007  
Revision: 1.0 8/46