ESMT
M12L64164A (2Y)
FUNCTIONAL BLOCK DIAGRAM
CLK
Clock
Generator
Bank D
Bank C
Bank B
CKE
Row
Address
Address
Buffer
&
Refresh
Counter
Bank A
Mode
Register
Sense Amplifier
Column Decoder
L(U)DQM
Column
Address
Buffer
&
Refresh
Counter
CS
RAS
CAS
WE
Data Control Circuit
DQ
PIN FUNCTION DESCRIPTION
PIN
NAME
System Clock
INPUT FUNCTION
CLK
CS
Active on the positive going edge to sample all inputs
Disables or enables device operation by masking or enabling all
inputs except CLK , CKE and L(U)DQM
Chip Select
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior new command.
Disable input buffers for power down in standby.
CKE
Clock Enable
Address
Row / column address are multiplexed on the same pins.
Row address : RA0~RA11, column address : CA0~CA7
A0 ~ A11
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
BA1 , BA0
Bank Select Address
Latches row addresses on the positive going edge of the CLK with
RAS low.
Row Address Strobe
RAS
CAS
Enables row access & precharge.
Latches column address on the positive going edge of the CLK with
Column Address Strobe
CAS low.
Enables column access.
Enables write operation and row precharge.
Write Enable
WE
Latches data in starting from CAS , WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
L(U)DQM
Data Input / Output Mask
DQ0 ~ DQ15
VDD / VSS
Data Input / Output
Data inputs / outputs are multiplexed on the same pins.
Power Supply / Ground
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
VDDQ / VSSQ Data Output Power / Ground
NC No Connection
This pin is recommended to be left No Connection on the device.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2012
Revision: 1.1 2/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
