ESMT
M12L2561616A
Operation Temperature Condition -40~85°C
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = -40 to 85 °C
Version
CAS
Latency
Parameter
Symbol
Test Condition
Unit Note
-6
-7
Operating Current
(One Bank Active)
ICC1
Burst Length = 2, tRC = tRC(min), IOL = 0 mA
CKE = VIL(max), tcc = 10ns
170
150
mA
mA
1,2
ICC2P
4
4
Precharge Standby Current
in power-down mode
ICC2PS
ICC2N
CKE & CLK=VIL (max), tCC = ∞
CKE=VIH(min), CS = VIH(min), tCC = 10ns
Input signals are changed one time during 2tck
50
30
Precharge Standby Current
in non power-down mode
mA
CKE=VIH(min), CLK=VIL(max), tcc = ∞
input signals are stable
ICC2NS
ICC3P
CKE=VIL(max), tCC =10ns
20
20
Active Standby Current
in power-down mode
mA
mA
ICC3PS
CKE & CLK=VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 2clks
55
ICC3N
Active Standby Current
in non power-down mode
(One Bank Active)
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE=VIH(min), CLK=VIL(max), tCC = ∞
input signals are stable
ICC3NS
ICC4
45
mA
mA
Operating Current
(Burst Mode)
IOL = 0 mA, Page Burst, 4 Banks activated,
1,2
210
210
180
180
tCCD = 2 CLKs
Refresh Current
ICC5
ICC6
mA
mA
tRFC ≥ tRFC(min)
Self Refresh Current
CKE=0.2V
5
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2008
Revision: 1.2 4/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
