ESMT
M12L128168A
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted,TA = 0 to 70 °C
Version
Parameter
Symbol
Unit Note
Test Condition
-5
-6
-7
Operating Current
(One Bank Active)
ICC1
Burst Length = 1, tRC ≥ tRC(min), IOL = 0 mA
CKE ≤ VIL(max), tcc = tCK(MIN)
170 160 140
2
mA
mA
1,2
ICC2P
Precharge Standby Current
in power-down mode
ICC2PS
ICC2N
2
CKE & CLK ≤ VIL (max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = tCK(MIN)
Input signals are changed one time during 2tck
45
Precharge Standby Current
in non power-down mode
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
input signals are stable
ICC2NS
25
ICC3P
6
6
CKE ≤ VIL(max), tCC = tCK(MIN)
Active Standby Current
in power-down mode
mA
mA
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
CS
≥
≥
VIH(min), tCC=15ns
CKE VIH(min),
ICC3N
Input signals are changed one time during 2clks
Active Standby Current
in non power-down mode
(One Bank Active)
55
≥
≤
0.2V
All other pins
VDD-0.2V or
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
ICC3NS
ICC4
35
mA
mA
input signals are stable
Operating Current
(Burst Mode)
IOL = 0 mA, Page Burst, 2 Banks activated
1,2
280 210 180
Refresh Current
ICC5
ICC6
280 210 180
2
mA
mA
tRC ≥ tRC(min)
CKE ≤ 0.2V
Self Refresh Current
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 2.3 4/45