ESMT
M12L128168A (2L)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VIN, VOUT
VDD, VDDQ
TA
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
0 ~ +70
Unit
V
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Operating ambient temperature
Storage temperature
V
°C
TSTG
-55 ~ +150
°C
W
Power dissipation
PD
IOS
1
Short circuit current
50
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C )
Parameter
Supply voltage
Symbol
VDD, VDDQ
VIH
Min
3.0
2.0
-0.3
2.4
-
Typ
3.3
3.0
0
Max
Unit
V
Note
3.6
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
VDD+0.3
V
1
VIL
0.8
-
V
2
VOH
-
V
IOH = -2mA
IOL = 2mA
3
VOL
-
0.4
5
V
IIL
-5
-
μ A
Output leakage current
IOL
-5
-
5
μ A
4
Note:
1. VIH(max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2. VIL(min) = -1.5V AC for pulse width ≤ 10ns acceptable.
3. Any input 0V ≤ VIN ≤ VDD, all other pins are not under test = 0V.
4. Dout is disabled, 0V
VOUT ≤ VDD
.
≤
CAPACITANCE (VDD = 3.3V, TA = 25 °C , f = 1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance
CIN1
2.5
4
4
pF
CIN2
2.5
2
pF
pF
(CLK, CKE, CS , RAS , CAS , WE & L(U)DQM)
Data input/output capacitance (DQ0 ~ DQ15)
COUT
6.5
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.3 3/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
