EliteMT
M11B416256A
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-1V to +7V
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………1.43W
Short Circuit Output Current ……………………50mA
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C ≤ TA ≤ 70 °C ; VCC = 5V ± 10% unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
4.5
0
MAX
5.5
UNITS NOTES
Supply Voltage
VCC
V
V
1
Supply Voltage
VSS
0
Input High Voltage
Input Low Voltage
Input Leakage Current
VIH
2.4
-0.3
-10
VCC +0.3
0.8
V
1
1
VIL
V
µ A
0V ≤ VIN ≤ VIH (max)
ILI
10
0V ≤ VOUT ≤ VCC
Output(s) disable
Output Leakage Current
µ A
ILO
-10
10
Output High Voltage
Output Low Voltage
IOH = -5 mA
VOH
VOL
2.4
-
-
V
V
IOL = 4.2 mA
0.4
Note : 1.All Voltages referenced to VSS
MAX
-25 -28 -30 -35 -40
210 190 170 150 135 mA
UNITS NOTES
PARAMETER
CONDITIONS
SYMBOL
Operating Current
Standby Current
ICC1
1,2
RAS , CAS cycling , tRC =min
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
4
4
4
4
4
mA
mA
ICC2
CMOS interface, RAS , CAS ≥ VCC-0.2V
2
2
2
2
2
tRC = min
tPC = min
210 190 170 150 135 mA
210 190 170 150 135 mA
2
1,3
1
RAS only refresh Current
EDO Page Mode Current
Standby Current
ICC3
ICC4
5
5
5
5
5
mA
RAS =VIH, CAS = VIL
ICC5
CAS BeforeRAS
Refresh
tRC = min
210 190 170 150 135 mA
ICC6
Current
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9 3/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
