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F49B002UA-70N 参数 Datasheet PDF下载

F49B002UA-70N图片预览
型号: F49B002UA-70N
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 256K ×8 )只有5V CMOS闪存 [2 Mbit (256K x 8) 5V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 33 页 / 488 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EFST  
F49B002UA  
7. FUNCTIONAL DESCRIPTION  
7.1 Device operation  
This section describes the requirements and use  
of the device bus operations, which are initiated  
through the internal command register. The  
register is composed of latches that store the  
command, address and data information needed  
to execute the command. The contents of the  
register serve as inputs to the internal state  
machine. The state machine outputs dictate the  
function of the device. The F49B002UA features  
various bus operations as Table 2.  
Table 2. F49B002UA Operation Modes Selection  
ADDRESS  
A8  
A17 A12  
A5  
|
DESCRIPTION  
DQ0~DQ7  
OE  
CE  
WE  
|
|
|
A9  
A6  
A1 A0  
A13 A10  
A7  
A2  
Read  
Write  
L
L
L
H
L
AIN  
AIN  
Dout  
DIN  
H
Output Disable  
Standby  
L
H
X
H
X
X
X
High Z  
High Z  
H
Auto-select  
See Table 3  
Notes:  
1. L= Logic Low = VIL, H= Logic High = VIH, X= Don't Care, SA= Sector Address, AIN= Address In, DIN = Data In,  
Dout = Data Out.  
Table 3. F49B002UA Auto-Select Mode (High Voltage Method)  
ADDRESS  
A8  
DQ0~DQ7  
A17  
|
A12  
|
DESCRIPTION  
OE  
CE  
WE  
|
A9  
A6 A3 A2 A1 A0  
A13  
A10  
A4  
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
VID  
VID  
VID  
VID  
VID  
X
X
X
X
X
X
X
X
X
X
L
H
H
L
H
L
L
L
L
L
L
L
L
L
L
H
7FH  
7FH  
7FH  
8CH  
00H  
(Manufacturer ID:EFST)  
H
L
(Device ID: F49B002UA)  
L
L
Notes :  
1.Manufacturer and device codes may also be accessed via the software command sequence in Table 4.  
2. VID=11.5V to 12.5V.  
Elite Flash Storage Technology Inc.  
Publication Date : Sep. 2006  
Revision: 1.4 4/33