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F25L16PA-50PAG 参数 Datasheet PDF下载

F25L16PA-50PAG图片预览
型号: F25L16PA-50PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有16兆位串行闪存,配有双 [3V Only 16 Mbit Serial Flash Memory with Dual]
分类和应用: 闪存
文件页数/大小: 33 页 / 471 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L16PA  
WRITE ENABLE LATCH (WEL)  
BUSY  
The Write-Enable-Latch bit indicates the status of the internal  
memory Write Enable Latch. If this bit is set to “1”, it indicates the  
device is Write enabled. If the bit is set to “0” (reset), it indicates  
the device is not Write enabled and does not accept any memory  
Write (Program/ Erase) commands. This bit is automatically reset  
under the following conditions:  
The BUSY bit determines whether there is an internal Erase or  
Program operation in progress. A “1” for the BUSY bit indicates  
the device is busy with an operation in progress. A “0” indicates  
the device is ready for the next valid operation.  
Power-up  
Write Disable (WRDI) instruction completion  
Page Program instruction completion  
Auto Address Increment (AAI) Programming is completed and  
reached its highest unprotected memory address  
Sector Erase instruction completion  
Block Erase instruction completion  
Chip Erase instruction completion  
Auto Address Increment (AAI)  
The Auto-Address-Increment-Programming-Status bit provides  
status on whether the device is in AAI Programming mode or  
Page Program mode. The default at power up is Page Program  
mode.  
Write Status Register instructions  
Table 3: F25L16PA Block Protection Table  
Protection Level  
Status Register Bit  
Protected Memory Area  
BP2  
BP1  
0
BP0  
Block Range  
Address Range  
None  
0
0
0
0
0
1
1
1
1
0
1
0
1
0
1
0
1
None  
Upper 1/32  
Upper 1/16  
Upper 1/8  
Upper 1/4  
Upper 1/2  
All Blocks  
All Blocks  
0
Block 31  
1F0000H – 1FFFFFH  
1E0000H – 1FFFFFH  
1C0000H – 1FFFFFH  
180000H – 1FFFFFH  
100000H – 1FFFFFH  
000000H – 1FFFFFH  
000000H – 1FFFFFH  
1
Block 30~31  
Block 28~31  
Block 24~31  
Block 16~31  
Block 0~31  
Block 0~31  
1
0
0
1
1
Block Protection (BP2, BP1, BP0)  
Block Protection Lock-Down (BPL)  
The Block-Protection (BP2, BP1, BP0) bits define the size of the  
memory area, as defined in Table 3, to be software protected  
against any memory Write (Program or Erase) operations. The  
Write Status Register (WRSR) instruction is used to program the  
WP pin driven low (VIL), enables the Block-Protection-  
Lock-Down (BPL) bit. When BPL is set to 1, it prevents any  
further alteration of the BPL, BP2, BP1, and BP0 bits. When the  
WP pin is driven high (VIH), the BPL bit has no effect and its  
value is “Don’t Care”. After power-up, the BPL bit is reset to 0.  
BP2, BP1, BP0 bits as long as WP is high or the Block-  
Protection-Look (BPL) bit is 0. Chip Erase can only be executed if  
Block-Protection bits are all 0. After power-up, BP2, BP1 and BP0  
are set to1.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2009  
Revision: 1.4  
7/33