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F25L04UA-100PG 参数 Datasheet PDF下载

F25L04UA-100PG图片预览
型号: F25L04UA-100PG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存 [3V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 25 页 / 271 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L04UA  
Read (33 MHz)  
The Read instruction supports up to 33 MHz, it outputs the data  
starting from the specified address location. The data output  
stream is continuous through all addresses until terminated by a  
(wrap-around) of the address space, i.e. for 4 Mbit density, once  
the data from address location 7FFFFH had been read, the next  
output will be from address location 00000H.  
The Read instruction is initiated by executing an 8-bit command,  
low to high transition on CE . The internal address pointer will  
automatically increment until the highest memory address is  
reached. Once the highest memory address is reached, the  
address pointer will automatically increment to the beginning  
03H, followed by address bits [A23-A0]. CE must remain active  
low for the duration of the Read cycle. See Figure 4 for the Read  
sequence.  
CE  
MODE3  
1 2 3 4 5 6 7 8  
15 16  
23 24  
31 32  
39 40  
47 48  
55 56  
63 64  
70  
SCK MODE1  
ADD.  
MSB  
03  
ADD.  
ADD.  
SI  
MSB  
N
N+1  
DOUT  
N+2  
DOUT  
N+3  
DOUT  
N+4  
DOU T  
HIGH IMPENANCE  
SO  
DOUT  
MSB  
Figure 4 : READ SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.2 8/25