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EN25P05-75VI 参数 Datasheet PDF下载

EN25P05-75VI图片预览
型号: EN25P05-75VI
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory,]
分类和应用:
文件页数/大小: 30 页 / 402 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EN25P05  
OPERATING FEATURES  
SPI Modes  
The EN25P05 is accessed through an SPI compatible bus consisting of four signals: Serial Clock  
(CLK), Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus  
operation Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and  
Mode 3, as shown in Figure 3, concerns the normal state of the CLK signal when the SPI bus  
master is in standby and data is not being transferred to the Serial Flash. For Mode 0 the CLK signal  
is normally low. For Mode 3 the CLK signal is normally high. In either case data input on the DI pin is  
sampled on the rising edge of the CLK. Data output on the DO pin is clocked out on the falling edge  
of CLK.  
Figure 3. SPI Modes  
Page Programming  
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte,  
and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the  
internal Program cycle (of duration tPP).  
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be pro-  
grammed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on  
the same page of memory.  
Sector Erase and Bulk Erase  
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied,  
the bytes of memory need to have been erased to all 1s (FFh). This can be achieved either a sector  
at a time, using the Sector Erase (SE) instruction, or throughout the entire memory, using the Bulk  
Erase (BE) instruction. This starts an internal Erase cycle (of duration tSE or tBE). The Erase  
instruction must be preceded by a Write Enable (WREN) instruction.  
Polling During a Write, Program or Erase Cycle  
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE or  
BE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The Write In  
Progress (WIP) bit is provided in the Status Register so that the application program can monitor its  
value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete.  
Active Power, Stand-by Power and Deep Power-Down Modes  
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip  
Select (CS#) is High, the device is disabled, but could remain in the Active Power mode until all  
internal cycles have completed (Program, Erase, Write Status Register). The device then goes in to  
the Stand-by Power mode. The device consumption drops to ICC1  
.
The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down  
Mode (DP) instruction) is executed. The device consumption drops further to ICC2. The device re-  
mains in this mode until another specific instruction (the Release from Deep Power-down Mode and  
Read Device ID (RDI) instruction) is executed.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
5
Rev. C, Issue Date: 2008/01/17