欢迎访问ic37.com |
会员登录 免费注册
发布采购

EN25B16-100FI 参数 Datasheet PDF下载

EN25B16-100FI图片预览
型号: EN25B16-100FI
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory,]
分类和应用:
文件页数/大小: 37 页 / 474 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号EN25B16-100FI的Datasheet PDF文件第4页浏览型号EN25B16-100FI的Datasheet PDF文件第5页浏览型号EN25B16-100FI的Datasheet PDF文件第6页浏览型号EN25B16-100FI的Datasheet PDF文件第7页浏览型号EN25B16-100FI的Datasheet PDF文件第9页浏览型号EN25B16-100FI的Datasheet PDF文件第10页浏览型号EN25B16-100FI的Datasheet PDF文件第11页浏览型号EN25B16-100FI的Datasheet PDF文件第12页  
EN25B16  
Status Register.The Status Register contains a number of status and control bits that can be read or set  
(as appropriate) by specific instructions.  
BUSY bit. The BUSY bit indicates whether the memory is busy with a Write Status Register, Program or  
Erase cycle.  
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.  
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the  
area to be software protected against Program and Erase instructions.  
SRP bit. The Status Register Protect (SRP) bit is operated in conjunction with the Write Protect (WP#)  
signal. The Status Register Protect (SRP) bit and Write Protect (WP#) signal allow the device to be put in  
the Hardware Protected mode. In this mode, the non-volatile bits of the Status Register (SRP, BP2, BP1,  
BP0) become read-only bits.  
Write Protection  
Applications that use non-volatile memory must take into consideration the possibility of noise and other  
adverse system conditions that may compromise data integrity. To address this concern the EN25B16  
provides the following data protection mechanisms:  
z
Power-On Reset and an internal timer (t  
) can provide protection against inadvertent changes  
PUW  
while the power supply is outside the operating specification.  
z
z
Program, Erase and Write Status Register instructions are checked that they consist of a number of  
clock pulses that is a multiple of eight, before they are accepted for execution.  
All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set the  
Write Enable Latch (WEL) bit . This bit is returned to its reset state by the following events:  
Power-up  
– Write Disable (WRDI) instruction completion or Write Status Register (WRSR) instruction  
completion or Page Program (PP) instruction completion or Sector Erase (SE)instruction  
completion or Bulk Erase (BE) instruction completion or  
z
z
z
The Block Protect (BP2, BP1, BP0) bits allow part of the memory to be configured as read-only. This  
is the Software Protected Mode (SPM).  
The Write Protect (WP#) signal allows the Block Protect (BP2, BP1, BP0) bits and Status Register  
Protect (SRP) bit to be protected. This is the Hardware Protected Mode (HPM).  
In addition to the low power consumption feature, the Deep Power-down mode offers extra software  
protection from inadvertent Write, Program and Erase instructions, as all instructions are ignored  
except one particular instruction (the Release from Deep Power-down instruction).  
Table 3a. Protected Area Sizes- Bottom Boot Sector Organization  
Status Register  
Content  
Memory Content  
BP2  
Bit  
1
1
1
1
0
0
0
BP1  
Bit  
1
1
0
0
1
1
0
BP0  
Bit  
1
0
1
0
1
0
1
Addresses  
Density(KB)  
Portion  
Protect Sectors  
All  
000000h-1FFFFFh  
000000h-0FFFFFh  
000000h-00FFFFh  
000000h-007FFFh  
000000h-003FFFh  
000000h-001FFFh  
000000h-000FFFh  
None  
2048KB  
1024KB  
64KB  
32KB  
16KB  
8KB  
All  
Sector 0 to 19  
Sector 0 to 4  
Sector 0 to 3  
Sector 0 to 2  
Sector 0 to 1  
Sector 0  
Lower 1/2  
Lower 1/32  
Lower 1/64  
Lower 1/128  
Lower 1/256  
Lower 1/512  
None  
4KB  
None  
0
0
0
None  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
8
Rev. E, Issue Date: 2007/06/07