PTF 10065
e
RF Specifications (cont.) (100% Tested)
Characteristic
Symbol Min
Typ
Max
Units
Power Output at 1 dB Compressed
(V
= 28 V, I
= 380 mA, f = 1.99 GHz)
DQ
P-1dB
30
—
—
—
Watts
DD
Load Mismatch Tolerance
(V = 28 V, P = 30 W, I = 380 mA,
DQ
Y
—
10:1
—
DD
OUT
f = 1.99 GHz—all phase angles at frequency of test)
Input Return Loss
(V
= 28 V, P
= 3 W, I = 380 mA, f = 1.93, 1.99 GHz)
DQ
Rtn Loss
10
—
—
—
dB
DD
OUT
Insertion Phase (Referenced to Correlation Devices)
(V = 28 V, P = 3 W, I = 380 mA, f = 1.96 GHz)
f
–10
+10
Deg.
DD
OUT
DQ
Electrical Characteristics (cont.) (100% Tested) (100% Tested)
Characteristic
Conditions
Symbol Min
Typ
—
Max
—
Units
Volts
mA
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
V
GS
V
DS
V
DS
V
DS
V
GS
V
DS
= 0 V, I = 25 mA
V
(BR)DSS
62
—
D
= 28 V, V
= 0 V
I
—
1.0
—
GS
DSS
= 10 V, I = 75 mA
V
GS(th)
—
3.8
1.8
—
Volts
Siemens
mA
D
= 10 V, I = 6 A
D
g
—
—
fs
= 10 V
I
—
1
GSsf
Gate Quiescent Voltage
= 28 V, I = 380 mA
V
GS(q)
3.0
—
5.0
V
D
Maximum Ratings
Parameter
Symbol
Value
62
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
V
DSS
V
GS
±20
200
T
J
Total Device Dissipation
P
D
120
0.7
Watts
Above 25°C derate by
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (T
= 70°C)
R
qJC
1.4
°C/W
CASE
2
ERICSSON [ ERICSSON ]
