PTF 10048
e
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol Min
Typ
65
Max
—
Units
Volts
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
V
GS
V
DS
V
DS
V
DS
= 0 V, I = 50 mA
V
(BR)DSS
65
—
D
= 28 V, V
= 0 V
I
—
1.0
5.0
—
mA
GS
DSS
= 10 V, I = 75 mA
V
3.0
—
—
Volts
D
GS(th)
Forward Transconductance
= 10 V, I = 6 A
g
fs
1.8
Siemens
D
Maximum Ratings
Parameter
Symbol
Value
65
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
V
DSS
V
±20
GS
T
200
J
Total Device Dissipation
P
120
Watts
D
Above 25°C derate by
0.66
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (T
= 70°C)
R
qJC
1.5
°C/W
CASE
Typical Performance
Typical POUT, Gain & Efficiency
vs. Frequency
(at P-1dB)
Broadband Test Fixture Performance
14
12
10
8
45
35
Efficiency (%)
12
50
45
40
35
30
25
Gain (dB)
Gain (dB)
11
10
9
VDD = 28 V
IDQ = 425 mA
0
25
Efficiency (%)
Output Power (W)
- 5
-10
POUT = 10 W
6
VDD = 28 V
DQ = 425 mA
15
-15
-20
Return Loss
4
I
-25
5
8
2
-30
2000 2050 2100 2150 2200 2250 2300
2100
2125
2150
2175
2200
Frequency (MHz)
Frequency (MHz)
2
ERICSSON [ ERICSSON ]
