PTF 10007
35 Watts, 1.0 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large
signal amplifier applications to 1.0 GHz. It operates at 55% efficiency
and 13.5 dB of gain. Nitride surface passivation and gold
metallization ensure excellent device lifetime and reliability.
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Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% lot traceability
Available in Package 20235 as PTF 10052
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Typical Output Power & Efficiency
vs. Input Power
50
Output Pow er (W)
40
80
Ef f iciency (%)
60
40
20
0
0
1
2
3
100
A-12
1000
3456
7
9723
Package
20222
Output Power
30
20
10
0
V
DD
= 28 V
I
DQ
= 300 m A
f = 960 MHz
Efficiency
Package
20235
A-1
234
569
999
100
52
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
60
±20
200
120
0.7
–40 to +150
1.4
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1
ERICSSON [ ERICSSON ]
