PTB 20031
e
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol Min
Typ
30
70
5
Max
—
Units
Volts
Volts
Volts
—
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
I = 0 A, I = 100 mA
V
(BR)CEO
25
50
3.5
20
B
C
V
= 0 V, I = 100 mA
V
V
—
BE
C
(BR)CES
(BR)EBO
I
= 0 A, I = 5 mA
—
C
E
V
= 5 V, I = 1 A
h
FE
50
120
CE
C
RF Specifications (100% Tested)
Characteristic
Symbol Min
Typ
Max
Units
Gain
(V = 24 Vdc, P
= 40 W, I
= 40 W, I
= 200 mA, f = 420–470 MHz)
= 200 mA, f = 420–470 MHz)
G
8.0
50
—
9.5
—
—
—
—
dB
%
CC
CQ
pe
out
Collector Efficiency
(V = 24 Vdc, P
η
CC
CQ
C
out
Intermodulation Distortion
(V = 24 Vdc, P = 40 W(PEP), I
= 200 mA, f = 469 MHz,
IMD
-22
dBc
CC
CQ
1
out
f = 470 MHz)
2
Load Mismatch Tolerance
(V = 24 Vdc, P = 40 W, I
= 200 mA, f = 420–470 MHz
CQ
Ψ
—
—
5:1
—
CC
out
—all phase angles at frequency of test)
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
12
11
10
9
80
70
60
50
40
30
20
Efficiency (%)
Gain (dB)
VCC = 24 V
8
ICQ = 200 mA
7
Pout = 30 W
6
410
420
430
440
450
460
470
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Specifications subject to change
without notice.
LF
1-877-GOLDMOS
(1-877-465-3667)
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20031 Uen Rev. D 09-23-98
2
9/23/98