Preliminary
PBL 386 65/2
Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Temperature, Humidity
Storage temperature range
Operating temperature range
Operating junction temperature range, Note 1
TStg
TAmb
TJ
-55
-40
-40
+150
+110
+140
°C
°C
°C
Power supply, -40°C ≤ TAmb ≤ +85°C
V
V
V
V
V
CC with respect to A/BGND
EE with respect to A/BGND
Bat with respect to A/BGND, continuous
Bat with respect to A/BGND, 10 ms
Bat2 with respect to A/BGND
VCC
VEE
VBat
VBat
VBat2
-0.4
VBat
-75
-80
VBat
6.5
0.4
0.4
0.4
0.4
V
V
V
V
V
Power dissipation
Continuous power dissipation at TAmb ≤ +85 °C
PD
VG
1.5
W
Ground
Voltage between AGND and BGND
Relay Driver
Ring relay supply voltage
Ring relay current
-5
VCC
V
V
BGND +13
75 mA
Ring trip comparator
Input voltage
Input current
VDT, VDR
IDT, IDR
VBat
-5
VCC
5
V
mA
Digital inputs, outputs (C1, C2, C3, DET)
Input voltage
VID
VOD
IOD
-0.4
-0.4
VCC
VCC
30
V
Output voltage (DET not active)
Output current (DET)
V
mA
TIPX and RINGX terminals, -40°C < TAmb < +85°C, VBat = -50V
Maximum supplied TIPX or RINGX current
TIPX or RINGX voltage, continuous (referenced to AGND), Note 2
TIPX or RINGX, pulse < 10 ms, tRep > 10 s, Note 2
TIPX or RINGX, pulse < 1 µs, tRep > 10 s, Note 2
ITIPX, IRINGX -110
+110
2
5
10
15
mA
V
V
V
V
VTA, VRA
VTA, VRA
VTA, VRA
VTA, VRA
VBat
VBat - 20
VBat - 40
VBat - 70
TIP or RING, pulse < 250 ns, tRep > 10 s, Note 3
Recommended Operating Condition
Parameter
Symbol
Min
Max
Unit
Ambient temperature
TAmb
VCC
VEE
VBat
-40
4.75
VBat
-58
VBat
+85
5.25
-4.75
-10
°C
V
V
V
V
VCC with respect to AGND
VEE with respect to AGND
VBat with respect to BGND
VBat2 with respect to BGND
-10
Notes
1. The circuit includes thermal protection. Operation above max. junction temperature may degrade device reliability.
2. A diode in series with the VBat input increases the permitted continuous voltage and pulse < 10 ms to -85 V. A pulse
≤1µs is increased to the greater of |-70V| and |VBat -40V|.
3. RF1, FR2 ≥20 Ω is also required. Pulse is supplied to TIP and RING outside RF1, FR2.
2