PBL 386 61/2
Preliminary
Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Temperature, Humidity
Storage temperature range
Operating temperature range
Operating junction temperature range, Note 1
TStg
TAmb
TJ
-55
-40
-40
+150
+110
+140
°C
°C
°C
Power supply, 0°C ≤ TAmb ≤ +70°C
V
V
V
V
V
CC with respect to AGND
EE with respect to AGND
Bat with respect to BGND, continuous
Bat with respect to BGND, 10 ms
Bat2 with respect to A/BGND
VCC
VEE
VBat
VBat
VBat2
-0.4
VBat
-75
-80
VBat2
6.5
0.4
0.4
0.4
0.4
V
V
V
V
V
Power dissipation
Continuous power dissipation at TAmb ≤ +70 °C
PD
VG
1.5
W
Ground
Voltage between AGND and BGND
Relay Driver
Ring relay supply voltage
Ring relay current
-5
VCC
V
V
BGND +13
75 mA
Ring trip comparator
Input voltage
Input current
VDT, VDR
IDT, IDR
VBat
-5
VCC
5
V
mA
Digital inputs, outputs (C1, C2, DET)
Input voltage
VID
VOD
IOD
-0.4
-0.4
VCC
VCC
30
V
Output voltage (DET not active)
Output current (DET)
V
mA
TIPX and RINGX terminals, 0°C < TAmb < +70°C, VBat = -50 V
TIPX or RINGX current
TIPX or RINGX voltage, continuous (referenced to AGND), Note 2
TIPX or RINGX, pulse < 10 ms, tRep > 10 s, Note 2
TIPX or RINGX, pulse < 1 µs, tRep > 10 s, Note 2
TIP or RING, pulse < 250 ns, tRep > 10 s, Note 3
ITIPX, IRINGX -110
+110
2
5
10
15
mA
V
V
V
V
VTA, VRA
VTA, VRA
VTA, VRA
VTA, VRA
VBat
VBat - 20
VBat - 40
VBat - 70
Recommended Operating Condition
Parameter
Symbol
Min
Max
Unit
Ambient temperature
Maximum supplied VCC with respect to AGND
TAmb
VCC
VEE
VBat
VBat2
0
+70
5.25
-4.75
-10
°C
V
V
V
V
4.75
VBat
-58
VBat
VEE with respect to AGND
VBat with respect to BGND
VBat2 with respect to BGND
-10
Notes
1. The circuit includes thermal protection. Operation above max. junction temperature may degrade device reliability.
2. A diode in series with the VBat input increases the permitted continuous voltage and pulse < 10 ms to -85 V. A pulse
≤1µs is increased to the greater of |-70V| and |VBat -40V|.
3.
RF1 and RF2 ≥20 Ω are also required. Pulse is supplied to TIP and RING outside RF1 and RF2.
2
ERICSSON [ ERICSSON ]
