PBL 386 20/2
Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Temperature, Humidity
Storage temperature range
Operating temperature range
Operating junction temperature range, Note 1
TStg
TAmb
TJ
-55
-40
-40
+150
+110
+140
°C
°C
°C
Power supply, 0°C ≤ TAmb ≤ +70°C
V
V
V
V
CC with respect to A/BGND
Bat2 with respect to A/BGND
Bat with respect to A/BGND, continuous
Bat with respect to A/BGND, 10 ms
VCC
VBat2
VBat
VBat
-0.4
VBat
-75
-80
6.5
0.4
0.4
0.4
V
V
V
V
Power dissipation
Continuous power dissipation at TAmb ≤ +70 °C
PD
VG
1.5
0.3
W
V
Ground
Voltage between AGND and BGND
Relay Driver
-0.3
Ring relay supply voltage
BGND+14 V
Ring trip comparator
Input voltage
Input current
VDT, VDR
IDT, IDR
VBat
-5
AGND
5
V
mA
Digital inputs, outputs (C1, C2, C3, DET)
Input voltage
VID
-0.4
-0.4
VCC
VCC
V
V
Output voltage
VOD
TIPX and RINGX terminals, 0°C < TAmb < 70°C, VBat = -50V
Maximum supplied TIPX or RINGX current
I
TIPX, IRINGX -100
+100
2
mA
V
TIPX or RINGX voltage, continuous (referenced to AGND), Note 2
TIPX or RINGX, pulse < 10 ms, tRep > 10 s, Note 2
TIPX or RINGX, pulse < 1 µs, tRep > 10 s, Note 2
VTA, VRA
VTA, VRA
VTA, VRA
VTA, VRA
-80
VBat -10
VBat -25
VBat -35
5
V
10
15
V
TIPX or RINGX, pulse < 250 ns, tRep > 10 s, Notes 2 & 3
V
Recommended Operating Condition
Parameter
Symbol
Min
Max
Unit
Ambient temperature
TAmb
VCC
VBat
VG
0
+70
5.25
-8
°C
V
V
V
V
CC with respect to AGND
Bat with respect to AGND
4.75
-58
-100
AGND with respect to BGND
100
mV
Notes
1. The circuit includes thermal protection. Operation at or above 140°C junction temperature may degrade device reliability.
2. With the diodes DVB and DVB2 included, see figure 12.
3. RF1 and RF2 ≥ 20 Ω is also required. Pulse is applied to TIP and RING outside RF1 and RF2.
2
ERICSSON [ ERICSSON ]
