EM47DM0888SBA
Pin Description (Simplified)
Pin
Name
Function
(System Clock)
CK and CK are differential clock inputs. All address and control
input signals are sampled on the crossing of the positive edge of
F7,G7
CK, CK
CK and negative edge of CK . Output (read) data is referenced to
the crossings of CK and CK (both directions of crossing).
(Chip Select)
All commands are masked when CS is registered HIGH.
CS provides for external Rank selection on systems with
multiple Ranks. CS is considered part of the command code.
(Clock Enable)
H2
CS
CKE high activates and CKE low deactivates internal clock
signals and device input buffers and output drivers. Taking CKE
low provides precharge power-down and self- refresh operation
(all banks idle), or active power-down (row active in any bank).
CKE is asynchronous for self refresh exit. After VREFCA has
become stable during the power on and initialization sequence, it
must be maintained during all operations (including self-refresh).
CKE must be maintained high throughout read and write
G9
CKE
accesses. Input buffers, excluding CK, CK , ODT and CKE are
disabled during power-down. Input buffers, excluding CKE, are
disabled during self -refresh.
(Address)
Provided the row address (RA0 – RA13) for active commands
and the column address (CA0-CA9) and auto precharge bit for
read/write commands to select one location out of the memory
array in the respective bank. A10 is sampled during a precharge
command to determine whether the precharge applies to one
bank (A10 LOW) or all banks (A10 HIGH). The address inputs
also provide the op-code during Mode Register Set commands.
A12 is sampled during read and write commands to determine if
burst chop (on-the-fly) will be performed. (HIGH: no burst chop,
LOW: burst chopped). See command truth table for details.
K3,L7,L3,K2,
L8,L2,M8,M2,
N8,M3,H7,M7,
K7,N3
A0~A9,A10/AP,
A11,A12(BC ),
A13
(Bank Address)
BA0 – BA2 define to which bank an active, read, write or
precharge command is being applied. Bank address also
determines if the mode register is to be accessed during a MRS
cycle.
J2,K8,J3
BA0, BA1,BA2
(On Die Termination)
ODT (registered HIGH) enables termination resistance internal to
the DDR3 SDRAM. When enabled, ODT is applied to each DQ,
G1
ODT
DQS,DQS , DM/TDQS, and TDQS signal. The ODT pin will be
ignored if the Mode Register MR1 is programmed to disable ODT.
May. 2011
5/39
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