EM47DM0888SBA
1Gb (16M×8Bank×8) Double DATA RATE 3 SDRAM
Features
Description
The EM47DM0888SBA is a high speed Double Date
Rate 3 (DDR3) Synchronous DRAM fabricated with
ultra high performance CMOS process containing
1,073,741,824 bits which organized as 16Mbits x 8
banks by 8 bits. This synchronous device achieves
high speed double-data-rate transfer rates of up to
1600 Mb/sec/pin (DDR3-1600) for general
• JEDEC Standard VDD/VDDQ = 1.5V±0.075V.
• All inputs and outputs are compatible with SSTL_15
interface.
• Fully differential clock inputs (CK, /CK) operation.
• Eight Banks
• Posted CAS by programmable additive latency
• Bust length: 4 with Burst Chop (BC) and 8.
• CAS Write Latency (CWL): 5, 6, 7, 8
• CAS Latency (CL): 6, 7, 8, 9, 10, 11
• Write Latency (WL) =Read Latency (RL) -1.
• Bi-directional Differential Data Strobe (DQS).
• Data inputs on DQS centers when write.
• Data outputs on DQS, /DQS edges when read.
• On chip DLL align DQ, DQS and /DQS transition
with CK transition.
• DM mask write data-in at the both rising and falling
edges of the data strobe.
• Sequential & Interleaved Burst type available both
for 8 & 4 with BC.
• Multi Purpose Register (MPR) for pre-defined
pattern read out
• On Die Termination (ODT) options: Synchronous
ODT, Dynamic ODT, and Asynchronous ODT
• Auto Refresh and Self Refresh
applications. The chip is designed to comply with the
following key DDR3 SDRAM features: (1) posted
CAS with additive latency, (2) write latency = read
latency -1, (3) On Die Termination, (4) programmable
driver strength data,(5) seamless BL4 access with
bank-grouping. All of the control and address inputs
are synchronized with a pair of externally supplied
differential clocks. Inputs are latched at the cross
point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional
differential data strobes (DQS and /DQS) in a source
synchronous fashion. The address bus is used to
convey row, column and bank address information in
a /RAS and /CAS multiplexing style. The 1Gb DDR3
devices operates with a single power supply: 1.5V ±
0.075V VDD and VDDQ. Available package:
• 8,192 Refresh Cycles / 64ms
• Refresh Interval: 7.8us Tcase between 0°C ~ 85°C
• Refresh Interval: 3.9us Tcase between 85°C ~ 95°C
• RoHS Compliance
• Driver Strength: RZQ/7, RZQ/6,RZQ/5(RZQ=240Ω)
• High Temperature Self-Refresh rate enable
• Multi Purpose Register for pre-defined pattern read
out
FBGA-78Ball (with 0.8mm x 0.8mm ball pitch)
• ZQ calibration for DQ drive and ODT
• RESET pin for initialization and reset function
May. 2011
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EOREX [ EOREX CORPORATION ]
