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EM44DM1688LBB-25F 参数 Datasheet PDF下载

EM44DM1688LBB-25F图片预览
型号: EM44DM1688LBB-25F
PDF下载: 下载PDF文件 查看货源
内容描述: JEDEC标准VDD / VDDQ [JEDEC Standard VDD/VDDQ]
分类和应用:
文件页数/大小: 29 页 / 659 K
品牌: EOREX [ EOREX CORPORATION ]
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EM44DM1688LBB  
2Gb (16M×8Bank×16) Double DATA RATE 2 SDRAM  
Features  
Description  
• JEDEC Standard VDD/VDDQ = 1.8V±0.1V.  
• All inputs and outputs are compatible with SSTL_18  
interface.  
The EM44DM1688LBB is a high speed Double Date  
Rate 2 (DDR2) Synchronous DRAM fabricated with  
ultra high performance CMOS process containing  
2,147,483,648 bits which organized as 16Mbits x 8  
banks by 16 bits. This synchronous device achieves  
high speed double-data-rate transfer rates of up to  
1066 Mb/sec/pin (DDR2-1066) for general  
• Fully differential clock inputs (CK, /CK) operation.  
• Eight Banks  
• Posted CAS  
• Bust length: 4 and 8.  
• Programmable CAS Latency (CL): 5, 7  
• Programmable Additive Latency (AL): 0, 1, 2, 3, 4,  
5 & 6.  
• Write Latency (WL) =Read Latency (RL) -1.  
• Read Latency (RL) = Programmable Additive  
Latency (AL) + CAS Latency (CL)  
• Bi-directional Differential Data Strobe (DQS).  
• Data inputs on DQS centers when write.  
• Data outputs on DQS, /DQS edges when read.  
• On chip DLL align DQ, DQS and /DQS transition  
with CK transition.  
• DM mask write data-in at the both rising and falling  
edges of the data strobe.  
• Sequential & Interleaved Burst type available.  
• Off-Chip Driver (OCD) Impedance Adjustment  
• On Die Termination (ODT)  
applications. The chip is designed to comply with the  
following key DDR2 SDRAM features: (1) posted  
CAS with additive latency, (2) write latency = read  
latency -1, (3) Off-Chip Driver (OCD) impedance  
adjustment and On Die Termination (4) normal and  
weak strength data output driver. All of the control  
and address inputs are synchronized with a pair of  
externally supplied differential clocks. Inputs are  
latched at the cross point of differential clocks (CK  
rising and /CK falling). All I/Os are synchronized with  
a pair of bidirectional strobes (DQS and /DQS) in a  
source synchronous fashion. The address bus is  
used to convey row, column and bank address  
information in a /RAS and /CAS multiplexing style.  
The 2Gb DDR2 device operates with a single power  
supply: 1.8V ± 0.1V VDD and VDDQ. Available  
package: FBGA-84Ball (with 0.8mm x 0.8mm ball  
pitch)  
• Auto Refresh and Self Refresh  
• 8,192 Refresh Cycles / 64ms  
• Average Refresh Period 7.8us  
• RoHS Compliance  
• High Temperature Self-Refresh rate enable  
Nov. 2011  
2/29  
www.eorex.com