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EM44CM1688LBC-25 参数 Datasheet PDF下载

EM44CM1688LBC-25图片预览
型号: EM44CM1688LBC-25
PDF下载: 下载PDF文件 查看货源
内容描述: JEDEC标准VDD / VDDQ [JEDEC Standard VDD/VDDQ]
分类和应用:
文件页数/大小: 29 页 / 660 K
品牌: EOREX [ EOREX CORPORATION ]
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EM44CM1688LBC  
Pin Description (Simplified)  
Pin  
Name  
Function  
(System Clock)  
CK and CK are differential clock inputs. All address and control input  
signals are sampled on the crossing of the positive edge of CK and  
negative edge of CK. Output (read) data is referenced to the crossings  
of CK and CK (both directions of crossing).  
J8,K8  
CK,/CK  
(Chip Select)  
All commands are masked when CS is registered HIGH. CS provides  
for external Rank selection on systems with multiple Ranks. CS is  
considered part of the command code.  
L8  
/CS  
(Clock Enable)  
CKE high activates and CKE low deactivates internal clock signals and  
device input buffers and output drivers. Taking CKE low provides  
Precharge Power-Down and Self- Refresh operation (all banks idle), or  
Active Power-Down (row Active in any bank). CKE is synchronous for  
power down entry and exit and for Self-Refresh entry. CKE is  
asynchronous for Self-Refresh exit. CKE must be maintained high  
throughout read and write accesses. Input buffers, excluding CK, /CK,  
ODT and CKE are disabled during Power Down. Input buffers,  
excluding CKE are disabled during Self-Refresh.  
K2  
CKE  
(Address)  
Provided the row address (RA0 – RA12) for Active commands and the  
column address (CA0-CA9) and Auto Precharge bit for Read/Write  
commands to select one location out of the memory array in the  
respective bank. A10 is sampled during a Precharge command to  
determine whether the Precharge applies to one bank (A10 LOW) or  
all banks (A10 HIGH). If only one bank is to be precharged, the bank is  
selected by BA0, BA1 & BA2. The address inputs also provide the  
op-code during Mode Register Set commands.  
M8,M3,M7,N2,  
N8,N3,N7,P2,  
P8,P3,M2,P7,  
R2,R8  
A0~A12  
(Bank Address)  
BA0 – BA2 define to which bank an Active, Read, Write or Precharge  
command is being applied. Bank address also determines if the mode  
register or extended mode register is to be accessed during a MRS or  
EMRS cycle.  
L2,L3,L1  
BA0, BA1,BA2  
(On Die Termination)  
ODT (registered HIGH) enables termination resistance internal to the  
DDR2 SDRAM. When enabled, ODT is applied to each DQ,  
UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin will  
be ignored if the Extended Mode Register (EMRS(1)) is programmed  
to disable ODT.  
K9  
ODT  
(Command Inputs)  
K7, L7, K3  
/RAS,/CAS,/WE  
/RAS, /CAS and /WE (along with /CS) define the command being  
entered.  
Dec. 2012  
5/29  
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