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EM44AM1684LBC-3FE 参数 Datasheet PDF下载

EM44AM1684LBC-3FE图片预览
型号: EM44AM1684LBC-3FE
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB ( 4M 】 4Bank 】 16 )双数据速率2 SDRAM [256Mb (4M】4Bank】16) Double DATA RATE 2 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 408 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM44AM1684LBC  
Pin Description (Simplified)  
Pin  
Name  
Function  
(System Clock)  
CK and CK are differential clock inputs. All address and control  
input signals are sampled on the crossing of the positive edge of  
CK and negative edge of CK. Output (read) data is referenced to  
the crossings of CK and CK (both directions of crossing).  
(Chip Select)  
J8,K8  
CK,/CK  
All commands are masked when CS is registered HIGH. CS  
provides for external Rank selection on systems with multiple  
Ranks. CS is considered part of the command code.  
L8  
/CS  
(Clock Enable)  
CKE high activates and CKE low deactivates internal clock signals  
and device input buffers and output drivers. Taking CKE low  
provides Precharge Power-Down and Self- Refresh operation (all  
banks idle), or Active Power-Down (row Active in any bank). CKE  
is synchronous for power down entry and exit and for Self-Refresh  
entry. CKE is asynchronous for Self-Refresh exit. CKE must be  
maintained high throughout read and write accesses. Input buffers,  
excluding CK, CK, ODT and CKE are disabled during Power Down.  
Input buffers, excluding CKE are disabled during Self-Refresh.  
K2  
CKE  
(Address)  
Provided the row address for Active commands and the column  
address and Auto Precharge bit for Read/Write commands to  
select one location out of the memory array in the respective bank.  
A10 is sampled during a Precharge command to determine  
whether the Precharge applies to one bank (A10 LOW) or all banks  
(A10 HIGH). If only one bank is to be precharged, the bank is  
selected by BA0, BA1. The address inputs also provide the  
op-code during Mode Register Set commands.  
M8,M3,M7,N2,N8,  
N3,N7,P2,P8,P3,  
M2,P7,R2  
A0~12  
(Bank Address)  
BA0 - BA1 define to which bank an Active, Read, Write or  
Precharge command is being applied (For 256Mb and 512Mb, BA2  
is not applied). Bank address also determines if the mode register  
or extended mode register is to be accessed during a MRS or  
EMRS cycle.  
L2,L3  
BA0, BA1  
(On Die Termination)  
ODT (registered HIGH) enables termination resistance internal to  
the DDR2 SDRAM. When enabled, ODT is applied to each DQ,  
UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin  
will be ignored if the Extended Mode Register (EMRS(1)) is  
programmed to disable ODT.  
K9  
ODT  
(Command Inputs)  
/RAS, /CAS,  
/WE  
K7, L7, K3  
B7,A8,F7,E8  
/RAS, /CAS and /WE (along with /CS) define the command being  
entered.  
(Data Strobe)  
Output with read data, input with write data. Edge-aligned with read  
data, centered in write data. LDQS corresponds to the data on  
DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. The  
data strobes LDQS and UDQS may be used in single ended mode  
or paired with optional complementary signals /LDQS and /UDQS  
UDQS,/UDQS,  
LDQS,/LDQS  
Jul. 2006  
www.eorex.com  
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