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EM421M1684LBA-7FE 参数 Datasheet PDF下载

EM421M1684LBA-7FE图片预览
型号: EM421M1684LBA-7FE
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB ( 8M × 4Bank × 16 ),双倍数据速率SDRAM [512Mb (8M】4Bank】16) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 20 页 / 961 K
品牌: EOREX [ EOREX CORPORATION ]
 浏览型号EM421M1684LBA-7FE的Datasheet PDF文件第4页浏览型号EM421M1684LBA-7FE的Datasheet PDF文件第5页浏览型号EM421M1684LBA-7FE的Datasheet PDF文件第6页浏览型号EM421M1684LBA-7FE的Datasheet PDF文件第7页浏览型号EM421M1684LBA-7FE的Datasheet PDF文件第9页浏览型号EM421M1684LBA-7FE的Datasheet PDF文件第10页浏览型号EM421M1684LBA-7FE的Datasheet PDF文件第11页浏览型号EM421M1684LBA-7FE的Datasheet PDF文件第12页  
eorex  
Preliminary  
EM42BM1684LBB  
AC Operating Test Characteristics (Continued)  
(VDD=1.8V±0.1V, TA=0°C ~70°C)  
-75  
Units  
Symbol  
Parameter  
Read Postamble  
Min.  
0.4  
Max.  
0.6  
tRPST  
tRAS  
tCK  
ns  
Active to Precharge command period  
Active to Active command period  
Auto Refresh Row Cycle Time  
Active to Read or Write delay  
45  
75  
120k  
tRC  
tRFC  
tRCD  
tRP  
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
108  
30  
Precharge command period  
22.5  
15  
tRRD  
Active bank A to B command period  
Column address to column address  
delay  
tCCD  
1
-
tCK  
tHZP  
tCDLW  
tDPL  
Pre-charge command to high-Z  
Last data in to Write command  
Last data in to Precharge command  
3
1
3
-
-
-
tCK  
tCK  
tCK  
tSREX  
tWTR  
Exit self refresh to non-col. command  
Internal Write to Read command delay  
16  
1
-
-
tCK  
tCK  
tCKE  
tWPD  
tRPD  
CKE minimum pulse width  
2
-
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
us  
Write to pre-charge delay(same bank) 3+BL/2  
-
Read to pre-charge delay(same bank)  
Write to Read command delay  
Burst stop to write delay  
BL/2  
-
tWRD  
tBSTW  
tWRD  
tREFI  
2+BL/2  
-
-
3
2
-
Write recovery  
-
Average periodic refresh interval  
7.8  
Jul. 2006  
www.eorex.com  
8/20