EP53A8LQI/EP53A8HQI
Detailed Description
Functional Overview
inductor greatly simplifies the power supply
design process. The inherent shielding and
compact construction of the integrated inductor
reduces the conducted and radiated noise that
can couple into the traces of the printed circuit
The EP53A8xQI requires only 2 small MLCC
capacitors and an 0201MLC resistor for a
complete DC-DC converter solution.
The
device integrates MOSFET switches, PWM
controller, Gate-drive, compensation, and
inductor into a tiny 3mm x 3mm x 1.1mm QFN
package. Advanced package design, along
with the high level of integration, provides very
low output ripple and noise. The EP53A8xQI
uses voltage mode control for high noise
immunity and load matching to advanced
≤90nm loads. A 3-pin VID allows the user to
choose from one of 8 output voltage settings.
The EP53A8xQI comes with two VID output
voltage ranges. The EP53A8HQI provides
VOUT settings from 1.8V to 3.3V, the
EP53A8LQI provides VID settings from 0.8V to
1.5V, and also has an external resistor divider
option to program output setting over the 0.6V
to VIN-0.5V range. The EP53A8xQI provides
the industry’s highest power density of any 1A
DCDC converter solution.
board.
Further, the package layout is
optimized to reduce the electrical path length
for the high di/dT input AC ripple currents that
are a major source of radiated emissions from
DC-DC converters. The integrated inductor
provides the optimal solution to the complexity,
output ripple, and noise that plague low power
DCDC converter design.
Voltage Mode Control, High Bandwidth
The EP53A8xQI utilizes an integrated type III
compensation network. Voltage mode control
is inherently impedance matched to the sub
90nm process technology that is used in
today’s advanced ICs. Voltage mode control
also provides a high degree of noise immunity
at light load currents so that low ripple and high
accuracy are maintained over the entire load
range. The very high switching frequency
allows for a very wide control loop bandwidth
and hence excellent transient performance.
The key enabler of this revolutionary
integration is Enpirion’s proprietary power
MOSFET technology. The advanced MOSFET
switches are implemented in deep-submicron
CMOS to supply very low switching loss at high
switching frequencies and to allow a high level
of integration. The semiconductor process
allows seamless integration of all switching,
control, and compensation circuitry.
Soft Start
Internal soft start circuits limit in-rush current
when the device starts up from a power down
condition or when the “ENABLE” pin is
asserted “high”. Digital control circuitry limits
the VOUT ramp rate to levels that are safe for
the Power MOSFETS and the integrated
inductor.
The proprietary magnetics design provides
high-density/high-value magnetics in a very
The EP53A8HQI has a soft-start slew rate that
is twice that of the EP53A8LQI.
small footprint.
Enpirion magnetics are
carefully matched to the control and
compensation circuitry yielding an optimal
solution with assured performance over the
entire operating range.
When the EP53A8LQI is configured in external
resistor divider mode, the device has a fixed
VOUT ramp time. Therefore, the ramp rate will
vary with the output voltage setting. Output
voltage ramp time is given in the Electrical
Characteristics Table.
Protection features include under-voltage lock-
out (UVLO), over-current protection (OCP),
short circuit protection, and thermal overload
protection.
Excess bulk capacitance on the output of the
device can cause an over-current condition at
startup. Assuming no-load at startup, the
Integrated Inductor: Low-Noise Low-EMI
The EP53A8xQI utilizes a proprietary low loss
integrated inductor. The integration of the
©Enpirion 2009 all rights reserved, E&OE
9
www.enpirion.com
03651
12/16/2009
Rev:B
ENPIRION [ ENPIRION, INC. ]
