EM621FU16BU Series
Low Power, 128Kx16 SRAM
128K x16 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
The EM621FU16BU series are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale Pack-
age for user flexibility of system design. The families also
supports low data retention voltage for battery back-up
operation with low data retention current.
- Process Technology : 0.15mm Full CMOS
- Organization : 128K x16
- Power Supply Voltage
=> EM621FU16BU Series : 2.7V~3.3V
- Low Data Retention Voltage : 1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
- Package Type: 44-TSOP2
The EM621FU16BU series are available in KGD, JEDEC
standard 44 pin 400 mil TSOP2 package.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc Range
Speed
PKG Type
Standby
(ISB1, Typ.)
Operating
(ICC1.Max)
Industrial (-40 ~ 85oC)
Industrial (-40 ~ 85oC)
Industrial (-40 ~ 85oC)
EM621FU16BU-45LF
EM621FU16BU-55LF
EM621FU16BU-70LF
2.7V~3.3V
2.7V~3.3V
2.7V~3.3V
45ns
55ns
70ns
1 µA
1 µA
1 µA
3mA
3mA
3mA
44-TSOP2
44-TSOP2
44-TSOP2
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
44
A5
A6
A7
OE
UB
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Pre-charge Circuit
CS
LB
I/O 15
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
VCC
VSS
I/O 0
I/O 1
I/O 2
I/O 14
I/O 13
I/O 12
VSS
VCC
I/O 11
I/O 10
I/O 9
I/O 8
NC
Memory Array
1024 x 2048
9
10
11
I/O 3
VCC
VSS
I/O 4
I/O 5
I/O 6
I/O 7
12
13
14
15
16
17
18
19
20
Data
I/O0 ~ I/O7
I/O8 ~ I/O15
Cont
I/O Circuit
Data
Cont
Column Select
WE
A16
A15
A14
A13
A12
A8
A9
A10
A11
A14
A15
A16
A11
A13
A10
A12
21
22
NC
WE
OE
UB
LB
Name
CS
Function
Name
Function
Control Logic
Chip select inputs
Vcc
Power Supply
Ground
CS
OE
Output Enable input Vss
Upper Byte (I/O8~15
)
WE
Write Enable input
Address Inputs
UB
LB
Lower Byte (I/O0~7
No Connection
)
A0~A16
I/O0~I/O15 Data Inputs/Outputs NC
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
