EM621FU16BU Series
Low Power, 128Kx16 SRAM
DATA RETENTION CHARACTERISTICS
2)
Parameter
VCC for Data Retention
Symbol
VDR
Test Condition
Min
Typ
Max
Unit
ISB1 Test Condition
(Chip Disabled) 1)
1.5
-
3.3
V
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
IDR
Data Retention Current
-
0.5
5.0
µA
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
tRDR
0
-
-
-
-
See data retention wave form
ns
tRC
NOTES
1. See the I
measurement condition of data sheet page 4.
SB1
o
2. Typical value is measured at T =25 C and not 100% tested.
A
DATA RETENTION WAVE FORM
t
t
RDR
Data Retention Mode
SDR
V
cc
3.0V
2.2V
V
DR
CS > Vcc-0.2V
CS
GND
9