EM621FU16BU Series
Low Power, 128Kx16 SRAM
1)
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply voltage
Symbol
Min
2.7
0
Typ
3.0
0
Max
3.3
0
Unit
V
V
CC
Ground
V
V
V
SS
2)
Input high voltage
V
2.0
-
-
IH
V
+ 0.2
CC
3)
Input low voltage
V
0.6
V
IL
-0.2
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
1)
o
CAPACITANCE (f =1MHz, T =25 C)
A
Item
Input capacitance
Symbol
Test Condition
V =0V
Min
Max
Unit
C
-
8
pF
IN
IO
IN
Input/Ouput capacitance
C
V =0V
-
10
pF
IO
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
ILI
VIN=VSS to VCC
Input leakage current
-1
-1
-
-
-
-
1
1
3
uA
CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH
VIO=VSS to VCC
ILO
ICC
Output leakage current
Operating power supply
uA
IIO=0mA, CS=VIL, VIN=VIH or VIL
mA
Cycle time=1µs, 100% duty, IIO=0mA,
ICC1
CS<0.2V, LB<0.2V or/and UB<0.2V,
-
-
3
mA
mA
V
IN<0.2V or VIN>VCC-0.2V
45ns
55ns
70ns
-
-
-
-
-
-
-
-
35
30
25
0.4
Average operating current
Cycle time = Min, IIO=0mA, 100% duty,
CS=VIL, LB=VIL or/and UB=VIL ,
VIN=VIL or VIH
ICC2
VOL
VOH
ISB
IOL = 2.1mA
Output low voltage
Output high voltage
Standby Current (TTL)
V
V
IOH = -1.0mA
2.4
-
-
-
-
CS=VIH, Other inputs=VIH or VIL
0.3
mA
CS>VCC-0.2V, (CS controlled)
Other inputs = 0~VCC
11)
ISB1
Standby Current (CMOS)
LF
-
10
uA
o
(Typ. condition : VCC=3.0V @ 25 C)
o
(Max. condition : VCC=3.3V @ 85 C)
NOTES
1. Typical values are measured at Vcc=3.0V, T =25oC and not 100% tested.
A
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
