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EM613FP16AS-70LL 参数 Datasheet PDF下载

EM613FP16AS-70LL图片预览
型号: EM613FP16AS-70LL
PDF下载: 下载PDF文件 查看货源
内容描述: 128K X16位低功耗和低电压全CMOS静态RAM [128K x16 bit Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 363 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
 浏览型号EM613FP16AS-70LL的Datasheet PDF文件第2页浏览型号EM613FP16AS-70LL的Datasheet PDF文件第3页浏览型号EM613FP16AS-70LL的Datasheet PDF文件第4页浏览型号EM613FP16AS-70LL的Datasheet PDF文件第5页浏览型号EM613FP16AS-70LL的Datasheet PDF文件第7页浏览型号EM613FP16AS-70LL的Datasheet PDF文件第8页浏览型号EM613FP16AS-70LL的Datasheet PDF文件第9页浏览型号EM613FP16AS-70LL的Datasheet PDF文件第10页  
EM621FU16BU Series  
Low Power, 128Kx16 SRAM  
TIMING DIAGRAMS  
TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS=OE=V , UB or/and LB=V )  
IL  
IL  
t
RC  
Address  
Data Out  
t
AA  
t
OH  
Previous Data Valid  
Data Valid  
TIMING WAVEFORM OF READ CYCLE(2) (WE = V )  
IH  
t
RC  
Address  
CS  
t
AA  
t
OH  
t
CO  
t
HZ  
t
t
BA  
OE  
UB,LB  
t
t
BHZ  
OHZ  
OE  
t
OLZ  
High-Z  
Data Out  
Data Valid  
t
BLZ  
t
LZ  
NOTES (READ CYCLE)  
1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.  
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device  
interconnection.  
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