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EM611FS16BU-70LF 参数 Datasheet PDF下载

EM611FS16BU-70LF图片预览
型号: EM611FS16BU-70LF
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8位低功耗全CMOS静态RAM [512K x8 bit Low Power Full CMOS Static RAM]
分类和应用:
文件页数/大小: 10 页 / 387 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM641FT8  
Low Power, 512Kx8 SRAM  
TIMING WAVEFORM OF WRITE CYCLE(3) (WE Controlled, OE LOW)  
tWC  
Address  
4)  
tWR  
2)  
tCW  
CS  
tAW  
3)  
1)  
tAS  
tWP  
WE  
tDH  
tDW  
High-Z  
High-Z  
Data in  
Data Valid  
tWHZ  
Data Undefined  
Data out  
NOTES (WRITE CYCLE)  
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins at the latest transition among  
CS goes low and WE goes low. A write ends at the earliest transition when CS goes high and WE goes high.  
The tWP is measured from the beginning of write to the end of write.  
2. tCW is measured from the CS going low to end of write.  
3. tAS is measured from the address valid to the beginning of write.  
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS  
or WE going high.  
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