EM641FT8S Series
Low Power, 512Kx8 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
VCC for Data Retention
Symbol
VDR
Test Condition
Min
Typ2)
Max
Unit
ISB1 Test Condition
(Chip Disabled) 1)
1.5
-
-
V
ISB1 Test Condition
(Chip Disabled) 1)
IDR
Data Retention Current
-
1
7
µA
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
tRDR
0
-
-
-
-
See data retention wave form
ns
tRC
NOTES
1. See the ISB1 measurement condition of data sheet page 4.
2. Typical value is measured at TA=25oC and not 100% tested.
DATA RETENTION WAVE FORM
tRDR
tSDR
Data Retention Mode
Vcc
5V
2.2V
VDR
V
1.5V
DR
CS > Vcc-0.2V
CS
GND
9