EM641FT8S Series
Low Power, 512Kx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Supply voltage
Symbol
Min
4.5
0
Typ
Max
Unit
2)
V
VCC
-
0
-
5.5
Ground
VSS
VIH
V
V
0
2.2
VCC + 0.53)
0.6
Input high voltage
-0.54)
Input low voltage
VIL
-
V
Notes :
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
o
CAPACITANCE (f =1MHz, T =25 C)
A
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO=0V
-
10
pF
Note : Capacitance is sampled, not 100% tested.
o
o
DC ELECTRICAL CHARACTERISTICS (T = -40 C to +85 C)
A
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
ILI
V
=V to V
SS CC
Input leakage current
-1
-1
-
-
-
-
-
1
1
5
7
uA
IN
CS=V or OE=V or WE=V
IL
IH
IH
ILO
ICC
Output leakage current
Operating power supply
uA
mA
mA
V
=V to V
SS CC
IO
I
=0mA, CS=V , V =V or V
IL
IO
IL
IN
IH
Cycle time=1µs, 100% duty, I =0mA,
CS<0.2V, V <0.2V or V >V -0.2V
IO
ICC1
-
IN
IN
CC
45ns
55ns
70ns
-
-
-
-
-
-
65
55
45
Average operating current
Cycle time = Min, I =0mA, 100% duty,
IO
ICC2
mA
CS=V , V =V or V
IH
IL
IN
IL
VOL
VOH
ISB
I
I
= 2.1mA
= -1.0mA
Output low voltage
Output high voltage
Standby Current (TTL)
-
2.4
-
-
-
-
0.4
-
V
V
OL
OH
CS=V , Other inputs=V or V
1
mA
IH
IH
IL
CS>V -0.2V
CC
Other inputs = 0~VCC
1)
ISB1
Standby Current (CMOS)
LF
-
20
uA
1.5
o
(Typ. condition : V =5V @ 25 C)
CC
o
(Max. condition : V =5.5V @ 85 C)
CC
NOTES :
1.Typical values are measured at Vcc=5V, TA=25oC and not 100% tested.
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
