EM620FV8BT Series
Low Power, 256Kx8 SRAM
1)
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply voltage
Symbol
Min
2.7
0
Typ
3.3
0
Max
3.6
0
Unit
VCC
V
Ground
VSS
VIH
V
V
VCC + 0.22)
0.6
Input high voltage
2.2
-
-
-0.23)
Input low voltage
VIL
V
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
1)
o
CAPACITANCE (f =1MHz, T =25 C)
A
Item
Input capacitance
Symbol
Test Condition
Min
Max
Unit
CIN
CIO
VIN=0V
-
8
pF
Input/Ouput capacitance
VIO=0V
-
10
pF
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
ILI
V
=V to V
SS CC
Input leakage current
-1
-1
-
-
-
-
1
1
3
uA
IN
CS1=V or CS2=V or OE=V or WE=V
IL
IH
IL
IH
ILO
ICC
Output leakage current
Operating power supply
uA
V
=V to V
SS CC
IO
I
=0mA, CS1=V , CS2=WE=V , V =V or V
IL
mA
IO
IL
IH
IN
IH
Cycle time=1µs, 100% duty, I =0mA,
IO
ICC1
CS1<0.2V, CS2>V -0.2V,
-
-
3
mA
mA
CC
V
<0.2V or V >V -0.2V
IN CC
IN
45ns
55ns
70ns
-
-
-
-
-
-
-
-
35
30
25
0.4
Average operating current
Cycle time = Min, I =0mA, 100% duty,
IO
ICC2
CS1=V , CS2=V
IL
IH,
V
I
=V or V
IN
IL
IH
VOL
VOH
ISB
= 2.1mA
Output low voltage
Output high voltage
Standby Current (TTL)
V
V
OL
I
= -1.0mA
2.4
-
-
-
-
OH
CS1=V , CS2=V , Other inputs=V or V
IL
0.3
mA
IH
IL
IH
CS1>V -0.2V, CS2>V -0.2V (CS1 controlled)
CC
CC
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~V
CC
11)
ISB1
Standby Current (CMOS)
LF
-
10
uA
o
(Typ. condition : V =3.3V @ 25 C)
CC
o
(Max. condition : V =3.6V @ 85 C)
CC
NOTES
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
