EM620FV8BT Series
Low Power, 256Kx8 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
VCC for Data Retention
Symbol
VDR
Test Condition
Min
Typ2) Max
Unit
ISB1 Test Condition
(Chip Disabled) 1)
1.5
-
3.6
5.0
V
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
IDR
Data Retention Current
-
0.5
µA
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
tRDR
0
-
-
-
-
See data retention wave form
ns
tRC
NOTES
1. See the ISB1 measurement condition of data sheet page 4.
2. Typical value is measured at TA=25oC and not 100% tested.
DATA RETENTION WAVE FORM
tRDR
tSDR
Data Retention Mode
Vcc
3.0V
2.2V
VDR
CS1 > Vcc-0.2V
CS1
GND
Data Retention Mode
Vcc
3.0V
CS2
tRDR
tSDR
VDR
0.4V
CS2 < 0.2V
GND
9
EMLSI [ Emerging Memory & Logic Solutions Inc ]
