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EM615FU16EV-12LF 参数 Datasheet PDF下载

EM615FU16EV-12LF图片预览
型号: EM615FU16EV-12LF
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8位低功耗和低电压全CMOS静态RAM [256K x8 bit Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 477 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM620FV8BT Series  
Low Power, 256Kx8 SRAM  
TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 CONTROLLED)  
tWC  
Address  
tCW1,2(2)  
tWR(4)  
CS1  
tAS(3)  
CS2  
WE  
tAW  
tWP(1)  
tDH  
tDW  
Data in  
Data Valid  
High-Z  
High-Z  
Data out  
NOTES (WRITE CYCLE)  
1. A write occurs during the overlap(tWP) of low CS1, a high CS2 and low WE. A write begins at the latest  
transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition  
among CS1 goes high, CS2 goes low and WE goes high. The tWP is measured from the beginning of write  
to the end of write.  
2. tCW is measured from the CS1 going low or CS2 going high to end of write.  
3. tAS is measured from the address valid to the beginning of write.  
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS1  
or WE going high or CS2 going low.  
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