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EM6111FR8AW-12L 参数 Datasheet PDF下载

EM6111FR8AW-12L图片预览
型号: EM6111FR8AW-12L
PDF下载: 下载PDF文件 查看货源
内容描述: 256K X16位超低功耗和低电压全CMOS静态RAM [256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 73 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM641FU16E Series  
merging Memory & Logic Solutions Inc.  
Low Power, 256Kx16 SRAM  
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED)  
tWC  
Address  
tCW(2)  
tW R(4)  
CS  
tAW  
tBW  
UB,LB  
tWP(1)  
tAS(3)  
WE  
tDH  
tDW  
Data in  
Data Valid  
High-Z  
High-Z  
Data out  
NOTES (WRITE CYCLE)  
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins when CS goes low and WE  
goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double  
byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is  
measured from the beginning of write to the end of write.  
2. tCW is measured from the CS going low to end of write.  
3. tAS is measured from the address valid to the beginning of write.  
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS  
or WE going high.  
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