EM641FU16E Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Supply voltage
Symbol
Min
Typ
Max
Unit
VCC
2.7
3.0
3.3
V
Ground
VSS
VIH
0
0
-
0
V
V
VCC + 0.22)
0.6
Input high voltage
2.2
-0.23)
Input low voltage
VIL
-
V
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Input capacitance
Symbol
Test Condition
Min
Max
Unit
CIN
VIN=0V
VIO=0V
-
8
pF
pF
Input/Ouput capacitance
CIO
-
10
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI
V =VSS to VCC
IN
-1
-1
-
-
-
-
1
1
2
mA
mA
mA
CS=VIH or OE=VIH or WE=VIL, LB=UB=VIH
,
ILO
ICC
Output leakage current
Operating power supply
V =VSS to VCC
IO
I =0mA, CS=VIL, VIN=VIH or VIL
IO
Cycle time=1ms, 100% duty, IIO=0mA,
ICC1
CS<0.2V, LB<0.2V or/and UB<0.2V,
-
-
2
mA
mA
Average operating current
V <0.2V or VIN>VCC-0.2V
IN
55ns
70ns
-
-
-
-
25
20
Cycle time = Min, IIO =0mA, 100% duty,
ICC2
CS=VIL, LB=VIL or/and UB=VIL, VIN=VIL or VIH
Output low voltage
Output high voltage
Standby Current (TTL)
VOL
VOH
ISB
IOL = 2.1mA
-
2.2
-
-
-
-
0.4
-
V
V
IOH = -1.0mA
CS=VIH, LB=UB =VIH Other inputs=VIH or VIL
0.3
mA
CS>VCC-0.2V(CS controlled) or
LB=UB ³ VCC-0.2V, CS<0.2V(LB/UB Controlled)
Other inputs=0~VCC
(Typ. condition : VCC=3.0V @ 25oC)
(Max. condition : VCC=3.3V @ 85oC)
LL
LF
ISB1
Standby Current (CMOS)
-
1
5
mA
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
