EM641FU16E Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
VCC for Data Retention
Symbol
VDR
Test Condition
Min
Typ
Max
Unit
ISB1 Test Condition
1.5
-
3.3
V
1)
(Chip Disabled)
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
IDR
Data Retention Current
-
0.5
-
mA
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
tRDR
0
-
-
-
-
See data retention wave form
ns
tRC
NOTES
1. See the ISB1 measurement condition of datasheet page 4.
DATA RETENTION WAVE FORM
tRDR
tSDR
Data Retention Mode
Vcc
2.7V
2.2V
VDR
CS > Vcc-0.2V or LB=UB ³ V -0.2V
CC
CS,LB/UB
GND
9