EM610FV16 Series
merging Memory & Logic Solutions Inc.
Low Power, 64Kx16 SRAM
FEATURES
GENERAL DESCRIPTION
• Process Technology : 0.18mm Full CMOS
• Organization : 64K x 16 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min.)
• Three state output and TTL Compatible
• Package Type : 48-FPBGA 6.0x7.0
The EM610FV16 families are fabricated by EMLSI’ s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The fami-
lies also supports low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc Range
Speed
PKG Type
Standby
(ISB1, Typ.)
Operating
(ICC1.Max.)
Industrial (-40 ~ 85oC)
551) /70ns
0.5mA2)
EM610FV16
2.7V~3.6V
3 mA
48-FPBGA
1. The parameter is measured with 30pF test load.
2. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
Pre-charge Circuit
A
B
C
D
E
LB
I/O9
OE
UB
A0
A3
A1
A4
A6
A2
CS2
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
VCC
VSS
CS1 I/O1
I/O2 I/O3
I/O4 VCC
Memory Array
I/O10 I/O11 A5
1024 x 1024
VSS I/O12 DNU A7
VCC I/O13 DNU DNU I/O5 VSS
Data
Cont
I/O1 ~ I/O8
I/O Circuit
Data
Cont
I/O9 ~ I/O16
Column Select
F
I/O15 I/O14 A14
I/O16 DNU A12
A15
A13
A10
I/O6 I/O7
WE I/O8
A11 DNU
G
H
A
10
A11
A
12
A13 A14 A15
DNU A8
A9
48-FPBGA : Top view (ball down)
WE
OE
UB
LB
Control Logic
CS
1
Name
Function
Name
Function
CS
2
CS ,CS
Chip select inputs
Vcc Power Supply
1
2
OE
WE
Output Enable input
Write Enable input
Vss Ground
UB Upper Byte (I/O
)
9~16
A ~A
Address Inputs
LB
Lower Byte (I/O
)
1~8
0
15
I/O ~I/O
Data Inputs/outputs
DNU Do Not Use
1
16
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
