EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
VCC for Data Retention
Symbol
VDR
Test Condition
Min
Typ
Max
Unit
ISB1 Test Condition
V
1.0
-
2.2
1)
(Chip Disabled)
VCC=1.2V, ISB1 Test Condition
(Chip Disabled) 1)
IDR
Data Retention Current
-
2
mA
0.5
tSDR
tRDR
Chip Deselect to Data Retention Time
Operation Recovery Time
0
-
-
-
-
See data retention wave form
ns
tRC
NOTES
1. See the ISB1 measurement condition of datasheet page 4.
DATA RETENTION WAVE FORM
CS1 Controlled
tRDR
tSDR
Data Retention Mode
Vcc
1.65V
1.4V
VDR
CS > Vcc-0.2V
1
CS1
GND
CS2 Controlled
Data Retention Mode
Vcc
1.65V
CS2
tRDR
tSDR
VDR
0.4V
CS < 0.2V
2
GND
9
EMLSI [ Emerging Memory & Logic Solutions Inc ]
