EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Supply voltage
Symbol
Min
1.65
0
Typ
1.8
0
Max
2.2
0
Unit
V
VCC
VSS
VIH
VIL
Ground
V
VCC + 0.32)
0.4
Input high voltage
Input low voltage
1.4
-
-
V
V
-0.33)
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Input capacitance
Symbol
Test Condition
Min
Max
Unit
CIN
VIN=0V
VIO=0V
-
8
pF
Input/Ouput capacitance
CIO
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
-1
-1
-
Typ Max
Unit
V
=V to V
SS CC
ILI
Input leakage current
Output leakage current
Operating power supply
-
-
-
1
1
2
mA
mA
mA
IN
ILO
CS =V , CS =V or OE=V or WE=V , V =V
to V
SS CC
1
IH
2
IL
IH
IL
IO
I
=0mA, CS =V , CS =WE=V , V =V or V
1 IL 2 IH IN IH IL
ICC
IO
Cycle time=1ms, 100% duty, I =0mA,
IO
ICC1
CS <0.2V, CS >V -0.2V,
-
-
-
-
2
1
2
CC
mA
mA
V
<0.2V or V >V -0.2V
IN CC
IN
Average operating current
Cycle time = Min, I =0mA, 100% duty,
IO
ICC2
CS =V , CS =V
V
=V or V
IH
70ns
12
1
IL
2
IH, IN
IL
I
I
= 0.1mA
VOL
VOH
Output low voltage
Output high voltage
-
-
-
0.2
-
V
V
OL
= -0.1mA
1.4
OH
CS >V -0.2V, CS >V -0.2V (CS controlled)
1
CC
2
CC
1
or 0V<CS <0.2V (CS controlled),
2
2
LL
LF
Other inputs=0 ~ V
CC
ISB1
Standby Current (CMOS)
-
1
5
mA
o
(Typ. condition : V =1.8V @ 25 C)
CC
o
(Max. condition : V =2.2V @ 85 C)
CC
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
