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EM610FS32CW-55S 参数 Datasheet PDF下载

EM610FS32CW-55S图片预览
型号: EM610FS32CW-55S
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8位超低功耗和低电压全CMOS静态RAM [512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 71 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM640FP8 Series  
merging Memory & Logic Solutions Inc.  
Low Power, 512Kx8 SRAM  
TIMING WAVEFORM OF WRITE CYCLE(3) ( CS2 CONTROLLED)  
tWC  
Address  
tCW(2)  
tW R(4)  
CS1  
tAS(3)  
CS2  
tAW  
tWP(1)  
WE  
tDH  
tDW  
Data in  
Data Valid  
High-Z  
High-Z  
Data out  
NOTES (WRITE CYCLE)  
1. A write occurs during the overlap(tWP) of low CS1, a high CS2 and low WE. A write begins at the latest  
transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition  
when CS1 goes high, CS2 goes hagh and WE goes high. The tWP is measured from the beginning of write  
to the end of write.  
2. tCW is measured from the CS1 going low to end of write.  
3. tAS is measured from the address valid to the beginning of write.  
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS1 or WE  
going high.  
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