EM611FV16U Series
merging Memory & Logic Solutions Inc.
Low Power, 64Kx16 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
VCC for Data Retention
Symbol
VDR
Test Condition
Min
Typ2) Max
Unit
ISB1 Test Condition
1.5
-
3.6
-
V
1)
(Chip Disabled)
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
IDR
Data Retention Current
-
0.25
mA
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
tRDR
0
-
-
-
-
See data retention wave form
ns
tRC
NOTES
1. See the ISB1 measurement condition of datasheet page 4.
2.Typical values are measured at TA=25oC and not 100% tested.
DATA RETENTION WAVE FORM
tRDR
tSDR
Data Retention Mode
Vcc
2.7V
2.2V
VDR
CS > Vcc-0.2V
CS
GND
9