EM611FV16U Series
merging Memory & Logic Solutions Inc.
Low Power, 64Kx16 SRAM
FEATURES
GENERAL DESCRIPTION
• Process Technology : 0.18mm Full CMOS
• Organization : 64K x 16 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min.)
• Three state output and TTL Compatible
• Package Type : 44-TSOP2
The EM611FV16U families are fabricated by EMLSI’ s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The fami-
lies also supports low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc Range
Speed
PKG Type
Standby
(ISB1, Typ.)
Operating
(ICC1.Max.)
Industrial (-40 ~ 85oC)
551) /70ns
0.5 mA2)
EM611FV16U
2.7V~3.6V
3 mA
44 TSOP2
1. The parameter is measured with 30pF test load.
2. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
1
Pre-charge Circuit
A4
A3
A2
A1
A0
44
43
42
41
A5
A6
A7
OE
2
3
4
5
40
39
UB
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
6
VCC
VSS
CS
LB
7
I/O1
38
I/O16
8
9
I/O2
I/O3
37
36
I/O15
Memory Array
I/O14
10
11
I/O4
VCC
VSS
35
34
33
I/O13
VSS
1024 x 1024
44 - TSOP2
12
13
VCC
I/O5
I/O6
32
31
I/O12
I/O11
14
15
I/O7
I/O8
30
I/O10
16
17
29
28
I/O9
NC
Data
Cont
I/O1 ~ I/O8
WE
I/O Circuit
18
19
20
Data
Cont
A15
27
26
25
A8
I/O9 ~ I/O16
Column Select
A14
A13
A9
A10
21
22
A12
NC
24
A11
NC
23
A
10
A11
A
12
A13 A14 A15
WE
OE
UB
LB
Control Logic
Name
Function
Name
Function
CS
CS
OE
WE
Chip select input
Vcc Power Supply
Vss Ground
Output Enable input
Write Enable input
UB Upper Byte (I/O
)
9~16
A ~A
Address Inputs
LB
Lower Byte (I/O
)
1~8
0
15
I/O ~I/O
Data Inputs/outputs
16
NC No Connection
1
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
