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EM39LV010-45RH 参数 Datasheet PDF下载

EM39LV010-45RH图片预览
型号: EM39LV010-45RH
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位( 128Kx8 )快闪记忆体 [1M Bits (128Kx8) Flash Memory]
分类和应用:
文件页数/大小: 23 页 / 282 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM39LV010  
1M Bits (128Kx8) Flash Memory  
SPECIFICATION  
During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During  
internal Program operation, the host is free to perform additional tasks. Any command  
issued during the internal Program operation is ignored.  
EM39LV010 Device Operation  
Operation  
Read  
CE# OE# WE#  
DQ  
DOUT  
Address  
VIL  
VIL  
VIL  
VIH  
X
VIL  
VIH  
VIH  
X
VIH  
VIL  
VIL  
X
AIN  
AIN  
Program  
DIN  
X*  
Erase  
Sector address, XXH for Chip-Erase  
Standby  
High Z  
High Z/DOUT  
High Z/DOUT  
X
Write Inhibit  
Write Inhibit  
Software Mode  
VIL  
X
X
X
X
VIH  
VIH  
X
VIL  
VIL  
See Table 3  
Product  
Identification  
*X can be VIL or VIH, but no other value.  
Table 2: EM39LV010 Device Operation  
Write Command/Command Sequence  
The EM39LV010 provides two software methods to detect the completion of a Program or  
Erase cycle in order to optimize the system write cycle time. The software detection includes  
two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode  
is enabled after the rising edge of WE#, which initiates the internal Program or Erase  
operation. The actual completion of the write operation is asynchronous with the system;  
therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion  
of the write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid  
data may appear to conflict with either DQ7 or DQ6. In order to prevent such spurious  
rejection, when an erroneous result occurs, the software routine should include an additional  
two times loop to read the accessed location. If both reads are valid, then the device has  
completed the write cycle, otherwise the rejection is valid.  
Chip Erase  
The EM39LV010 provides Chip-Erase feature, which allows the entire memory array to be  
erased to logic “1” state. The Chip-Erase operation is initiated by executing a six-byte  
command sequence with Chip-Erase command (10H) at address 5555H in the last byte  
sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#,  
whichever occurs first. During the Erase operation, the only valid reads are Toggle Bit and  
Data# Polling. See Table 3 for the command sequence, Figure 6 for timing diagram, and  
Figure 15 for the flowchart. Any commands issued during the Chip-Erase operation are  
ignored.  
This specification is subject to change without further notice. (04.09.2004 V1.0)  
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