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EM39LV010 参数 Datasheet PDF下载

EM39LV010图片预览
型号: EM39LV010
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位( 128Kx8 )快闪记忆体 [1M Bits (128Kx8) Flash Memory]
分类和应用:
文件页数/大小: 23 页 / 282 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM39LV010  
1M Bits (128Kx8) Flash Memory  
SPECIFICATION  
Hardware Data Protection  
Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a  
write cycle.  
V
DD Power Up/Down Detection: The Write operation is inhibited when VDD is less than  
1.5V.  
Write Inhibit Mode: Forcing OE# Low, CE# High, or WE# High will inhibit the  
Write operation. This prevents inadvertent write during  
power-up or power-down.  
Software Data Protection (SDP)  
The EM39LV010 provides the JEDEC approved Software Data Protection (SDP) scheme for  
Program and Erase operations. Any Program operation requires the inclusion of the  
three-byte sequence. The three-byte load sequence is used to initiate the Program  
operation, providing optimal protection from inadvertent Write operations, especially during  
the system power-up or power-down transition. Any Erase operation requires the inclusion of  
six-byte sequence. See Table 3 for the specific software command codes. During SDP  
command sequence, invalid commands will abort the device to Read mode within TRC  
.
This specification is subject to change without further notice. (04.09.2004 V1.0)  
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