EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a
write cycle.
V
DD Power Up/Down Detection: The Write operation is inhibited when VDD is less than
1.5V.
Write Inhibit Mode: Forcing OE# Low, CE# High, or WE# High will inhibit the
Write operation. This prevents inadvertent write during
power-up or power-down.
Software Data Protection (SDP)
The EM39LV800 provides the JEDEC approved Software Data Protection (SDP) scheme for
Program and Erase operations. Any Program operation requires the inclusion of the
three-byte sequence. The three-byte load sequence is used to initiate the Program
operation, providing optimal protection from inadvertent Write operations, especially during
the system power-up or power-down transition. Any Erase operation requires the inclusion of
six-byte sequence. See Table 3 for the specific software command codes. During SDP
command sequence, invalid commands will abort the device to Read mode within TRC. The
contents of DQ15-DQ8 can be VIL or VIH, but no other value, during any SDP command
sequence.
Common Flash Memory Interface (CFI)
The EM39LV800 contains the CFI information to describe the characteristics of the device.
In order to enter the CFI Query mode, the system must write three-byte sequence, same as
Software ID Entry command, with 98H (CFI Query command) to address 5555H in the last
byte sequence. Once the device enters the CFI Query mode, the system can read CFI data
at the addresses given in Tables 4 through 6. The system must write the CFI Exit command
to return to Read mode from the CFI Query mode.
This specification is subject to change without further notice. (04.09.2004 V1.0)
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ELAN [ ELAN MICROELECTRONICS CORP ]
