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EM39LV80070D 参数 Datasheet PDF下载

EM39LV80070D图片预览
型号: EM39LV80070D
PDF下载: 下载PDF文件 查看货源
内容描述: 8M位( 512Kx16 )闪存 [8M Bits (512Kx16) Flash Memory]
分类和应用: 闪存
文件页数/大小: 25 页 / 295 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM39LV800  
8M Bits (512Kx16) Flash Memory  
SPECIFICATION  
CFI Query Identification String*  
Address  
Data  
Data  
10H  
11H  
12H  
0051H  
0052H  
0059H  
Query Unique ASCII string “QRY”  
13H  
14H  
0001H  
0007H  
Primary OEM command set  
15H  
16H  
0000H  
0000H  
Address for Primary Extend Table  
17H  
18H  
0000H  
0000H  
Alternate OEM command set (00H=none exists)  
Address for Alternate OEM extended Table (00H=none exists)  
19H  
1AH  
0000H  
0000H  
*Refer to CFI publication 100 for more details.  
Table 4: CFI Query Identification String1  
System Interface  
Address  
Data  
Data  
VDD Min (Program/Erase)  
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts  
DD Max (Program/Erase)  
1BH  
0027H  
V
1CH  
0036H  
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts  
1DH  
1EH  
1FH  
20H  
21H  
22H  
23H  
24H  
0000H  
0000H  
0004H  
0000H  
0004H  
0006H  
0001H  
0000H  
VPP min (00H=no VPP pin)  
VPP max (00H=no VPP pin)  
Typical time out for Word-Program 2N µs (24=16µs)  
Typical time out for min size buffer program 2N µs (00H=not supported)  
Typical time out for individual Sector/Block-Erase 2N ms (24=16ms)  
Typical time out for Chip-Erase 2N ms (26=64ms)  
Maximum time out for Word-Program 2N times typical (21x24=32µs)  
Maximum time out for buffer Program 2N times typical  
Maximum time out for individual Sector/Block-Erase 2N times typical  
25H  
26H  
0001H  
0001H  
(21x24=32ms)  
Maximum time out for Chip-Erase 2N times typical (21x26=128ms)  
Table 5: System Interface  
This specification is subject to change without further notice. (04.09.2004 V1.0)  
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