EBJ10UE8BDS0
SPD for Intel Extreme Memory Profile (EBJ10UE8BDS0-GN)
Hex
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 value Comments
Intel Extreme Memory
0CH
176
177
Intel extreme memory profile ID string
0
0
0
1
0
0
0
0
1
1
1
0
0
1
0
0
Profile ID String
Intel Extreme Memory
4AH
Intel extreme memory profile ID string
Profile ID String
Profile 1: Enabled /
Profile 2: Enabled /
Profile 1: 1 DIMM per
CH / Profile 2: 1
DIMM per CH /
Intel extreme memory profile
organization type
178
0
0
0
0
0
0
1
1
03H
179
180
Intel extreme memory profile revision
0
0
0
0
0
0
1
0
0
0
0
0
0
0
1
1
11H
01H
Revision 1.1
Medium timebase (MTB) dividend
for profile 1
1
Medium timebase (MTB) divisor
for profile 1
181
182
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
08H
01H
8
1
8
Medium timebase (MTB) dividend
for profile 2
Medium timebase (MTB) divisor
for profile 2
183
184
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
08H
00H
Reserved for global byte
[For Profile 1]
Hex
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 value Comments
185
186
Module VDD voltage level
0
0
0
0
1
0
0
0
1
1
0
0
1
1
0
0
2AH 1.50V
SDRAM minimum cycle time
(tCK (min.))
0AH DDR3-1600
SDRAM minimum /CAS latencies time
(tAA (min.))
187
188
189
190
191
192
0
1
0
0
0
0
1
0
0
1
1
1
1
1
0
1
1
1
0
1
0
0
0
0
1
1
0
1
1
1
0
1
0
0
0
0
0
0
0
0
0
0
1
0
0
1
1
1
69H
13.125ns
SDRAM /CAS latencies supported, LSB
(CL MASK)
BCH 6, 7, 8, 9, 11
00H
SDRAM /CAS latencies supported, MSB
(CL MASK)
Minimum CAS write latency time
(tCWL(min))
69H
69H
69H
13.125ns
13.125ns
SDRAM minimum row precharge time
(tRP)
SDRAM minimum /RAS to /CAS delay
(tRCD)
13.125ns
15ns
193
194
SDRAM write recovery time (tWR (min))
SDRAM upper nibbles for tRAS and tRC
0
0
1
0
1
0
1
1
1
0
0
0
0
0
0
1
78H
11H
SDRAM minimum active to precharge
time (tRAS), LSB
195
196
197
198
199
200
201
0
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
1
0
1
0
1
1
0
1
0
1
0
1
1
0
1
0
0
0
1
0
1
1
0
0
0
1
0
1
1
0
0
1
0
0
0
1
0
0
1
0
18H
86H
3FH
00H
70H
03H
35ns
SDRAM minimum active to active /auto-
refresh time (tRC), LSB
48.75ns
7.8µs
7.8µs
110ns
110ns
Maximum average periodic refresh interval
(tREFI), LSB
Maximum average periodic refresh interval
(tREFI), MSB
SDRAM minimum refresh recovery time
delay (tRFC), LSB
SDRAM minimum refresh recovery time
delay (tRFC), MSB
SDRAM minimum internal read to
precharge command delay (tRTP)
3CH 7.5ns
Preliminary Data Sheet E1512E10 (Ver. 1.0)
9
ELPIDA [ ELPIDA MEMORY ]
