EBE52UD6ABSA
Electrical Specifications
• All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
VT
–0.5 to +2.3
–0.5 to +2.3
50
V
VDD, VDDQ
V
IO
mA
W
°C
°C
PD
TC
Tstg
4
Operating case temperature
Storage temperature
0 to +85
–55 to +150
1
Note: DDR2 SDRAM component specification.
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TC = 0 to +85°C) (DDR2 SDRAM Component Specification)
Parameter
Symbol
VDD,VDDQ
VSS
min
typ
1.8
0
max
1.9
0
Unit
V
Notes
1
Supply voltage
1.7
0
V
VDDSPD
VREF
1.8
—
3.6
V
Input reference voltage
Termination voltage
Input high voltage
Input low voltage
0.49 × VDDQ
VREF – 0.04
VREF + 0.125
–0.3
0.50 × VDDQ 0.51 × VDDQ
V
VTT
VREF
—
VREF + 0.04
VDDQ + 0.3
VREF – 0.125
V
VIH (DC)
VIL (DC)
V
2
3
—
V
Input voltage level,
CK and /CK inputs
VIN (DC)
VIX (DC)
VID (DC)
–0.3
—
VDDQ + 0.3
V
V
V
4
Input differential cross point
voltage, CK and /CK inputs
0.5 × VDDQ − 0.1V 0.5 × VDDQ
0.3
0.5 × VDDQ + 0.1V
VDDQ + 0.4
Input differential voltage,
CK and /CK inputs
—
5, 6
Notes: 1. VDDQ must be lower than or equal to VDD.
2. VIH is allowed to exceed VDD up to 2.3V for the period shorter than or equal to 5ns.
3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
4. VIN (DC) specifies the allowable DC execution of each differential input.
5. VID (DC) specifies the input differential voltage required for switching.
6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
Preliminary Data Sheet E0418E10 (Ver. 1.0)
9
ELPIDA [ ELPIDA MEMORY ]
